DUBLIN–(BUSINESS WIRE)–The “Next Generation Memory Market – Growth, Trends, COVID-19 Impact, and Forecasts (2021 – 2026)” report has been added to ResearchAndMarkets.com’s offering.
The global next generation memory market was valued at USD 2935.1 million in 2020 and expected to reach USD 12833.1 million by 2026 and grow at a CAGR of 29.7% over the forecast period (2021 – 2026).
The emerging non-volatile memory technologies, such as MRAM, STT-RAM, FRAM, phase-change memory (PCM), and ReRAM combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory. Hence, these are the possible additions to the future memory technologies. Moreover, the adoption of next-generation infotainment systems and ADAS would be fusing the DRAM memory technologies that would have much higher performance and low power consumption capabilities.
Demand for universal memory devices is driving the market. Most of the new memory technologies are aimed at becoming universal memories to replace one of the members of the hierarchy with better technology. The high-end laptops are using solid-state flash chips, instead of huge mechanical hard disks and using the cloud for backup rather than tape drives. Recently, Intel announced Optane, which uses 3D XPoint technology that is close to universal memory. This is primarily a flash drive with non-volatile memory fast enough to function as RAM.
Increasing demand for enterprise storage applications is driving the market. The end-user industries, such as BFSI, are investing heavily in IoT technologies and reaping big financial rewards. For instance, embedded MRAM is considered as a promising technology for applications, such as IoT. Also, the other next-generation memories, such as 3D Xpoint, offer 1,000 times faster transfer speeds than the current SSDs. Hence this will drive the market efficiently.
Lack of stability under extreme environmental conditions is restraining the market. It is greatly impacted by extreme environmental conditions in terms of durability and reliability of memory devices. For instance, the more thermal stress a memory device is exposed to, the more of a risk there is of damaging it, which challenges a market to grow.
Key Topics Covered:
2 RESEARCH METHODOLOGY
3 EXECUTIVE SUMMARY
4 MARKET DYNAMICS
4.1 Market Overview
4.2 Introduction to Market Drivers and Restraints
4.3 Market Drivers
4.3.1 Demand for Universal Memory Devices
4.3.2 Increasing Demand for Enterprise Storage Applications
4.4 Market Restraints
4.4.1 Lack of Stability Under Extreme Environmental Conditions
4.5 Value Chain / Supply Chain Analysis
4.6 Industry Attractiveness – Porter’s Five Force Analysis
5 MARKET SEGMENTATION
5.1 By Technology
5.2 By Application
6 COMPETITIVE LANDSCAPE
6.1 Company Profiles
7 INVESTMENT ANALYSIS
8 MARKET OPPORTUNITIES AND FUTURE TRENDS
- Intel Corporation
- Toshiba Corporation
- Fujitsu Ltd
- Honeywell International Inc.
- Micron Technologies Inc.
- IBM Corporation
- Sony Corporation
- Samsung Electronics Co. Ltd
- Crossbar Inc.
- Cypress Semiconductor Corporation
- Avalanche Technologies Inc.
- Adesto Technologies
- Everspin Technologies Inc.
- SK Hynix Inc.
- Taiwan Semiconductor Manufacturing Company Limited (TSMC)
For more information about this report visit https://www.researchandmarkets.com/r/6c4wwd
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